Why Choose Adnano-tek Technology?
Atomic Layer Deposition System
ALD Series
Microwave Remote Plasma Enhanced Atomic Layer Deposition (MR-PEALD)
AdNaNoTek's Microwave Remote Plasma Enhanced Atomic Layer Deposition (MR-PEALD) is a deposition technique used for producing high quality epitaxial (atomic layer) thin film using controlled and programmed gas precursors inputs. This PEALD system is uniquely equipped with Electron Cyclotron Resonance (ECR) which uses microwave to produce successive ionization, vibrational excitation, and collision among gas molecules, and consequently generating plasma. Sufficient precursor units are provided to introduce deposition materials unto the substrate using a sophisticated gas control panel. The deposition chamber and substrate manipulator provides precise control of vacuum condition and substrate temperature to ensure epitaxial deposition process. Since the substrate heater can be heated up to 500C, hence, this PEALD can be conveniently used as a Thermal Atomic Layer Deposition (TALD) as well. In addition, due to the controllable ALD valves, this can also function as a Plasma Enhanced Chemical Vapor Deposition (PECVD) also.
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In addition, precise control and high stability is achieved by making the process automated with the use of the FBBEAR control software. The FBBEAR control software, provides complete data logging, precise parameter tuning which allows user to have easy operation and reliable experimental repeatability.
AdNaNotek can design and manufacture any types of ALD systems:
1) Rapid Thermal Atomic Layer Deposition (RTALD);
2) Low Pressure Atomic Layer Deposition (LPALD); and
3) Plasma Enhanced Atomic Layer Deposition (PEALD)
a. Inductively Coupled Plasma (ICP), or
b. Electron Cyclotron Resonance (ECR)
PEALD can be applied for epitaxial deposition of materials like: Silicon, Silicon oxide, etc.
AdNaNotek can design and manufacture any types of ALD systems:
1) Rapid Thermal Atomic Layer Deposition (RTALD);
2) Low Pressure Atomic Layer Deposition (LPALD); and
3) Plasma Enhanced Atomic Layer Deposition (PEALD)
a. Inductively Coupled Plasma (ICP), or
b. Electron Cyclotron Resonance (ECR)
PEALD can be applied for epitaxial deposition of materials like: Silicon, Silicon oxide, etc.
MAIN SPECIFICATIONS:
- Custom-type SS316L electro-polished chamber
- 1E-6 Torr Base Pressure
- UHV pumps and gauges
- 6-in substrate platen
- Resistive heating plate with sample heating temperature: 500°C
- 3 (or more) precursors with built-in ALD valves and gas lines
- 250C precursor heating
- Electron Cyclotron Resonance (ECR) plasma source
- 800W microwave generator
- Pressure control system: upstream
- FBBeam System Control Software
Advantages of Plasma Enhanced Atomic Layer Deposition
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Microwave ECR Plasma Generator
System Control Software
FBBEAR software is a multi-functional software to control the whole PEALD system, i.e. Manipulator rotation speed, heating program, etc.
FBBEAR can control EUROTHERMO2408 to control, tune and save multi-PID parameters for laser/filament heater for the best accuracy of different substrate temperature requirements. FBBEAR’s Deposition wizard make it hassle free to set, customize and save your experimental recipe and fully automatize the deposition processes. This also allows easy repetition of the deposition process having same experimental parameters. In addition, it also allows recording of data log in order to review past deposition parameters. |
Optional
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