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Introduction

 Copper indium gallium selenide solar cell (or CIGS cell, sometimes CI(G)S or CIS cell) is a thin-film solar cell used to convert sunlight into electric power. It is manufactured by depositing a thin layer of copper, indium, gallium and selenium on glass or plastic backing, along with electrodes on the front and back to collect current. Because the material has a high absorption coefficient and strongly absorbs sunlight, a much thinner film is required than of other semiconductor materials.

The most common vacuum-based process is to co-evaporate or co-sputter copper, gallium, and indium onto a substrate at room temperature, then anneal the resulting film with a selenide vapor. An alternative process is to co-evaporate copper, gallium, indium and selenium onto a heated substrate. A non-vacuum-based alternative process deposits nanoparticles of the precursor materials on the substrate and then sinters them in situ. Electroplating is another low cost alternative to apply the CIGS layer. The following sections outline the various techniques for precursor deposition processing, including sputtering of metallic layers at low temperatures, printing of inks containing nanoparticles, electrodeposition, and a technique inspired by wafer-bonding.

​Coevaporation, or codeposition, is the most prevalent CIGS fabrication technique. NREL developed process that involves three deposition steps and produced the current CIGS efficiency record holder at 20.3%. The first step in NREL's method is codeposition of In, Ga, and Se. This is followed by Cu and Se deposited at a higher temperature to allow for diffusion and intermixing of the elements. In the final stage In, Ga, and Se are again deposited to make the overall composition Cu deficient


Adnano-tek CIGS co-evaporator used 5 effusion cell
Since MBE technology, the thin film have very flat and great uniformity. Our customer is easily achieve transfer efficiency up to 12% up.
The base pressure is easy better than E-9 torr after bake out. The Se cell is special modified for anti-corresive application.
Interested in this? Please call us, Today.

CIGS-MBE Solar Cell Fabrication

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CIGS MBE
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  • AdNaNotek
    • News
    • Online Catalogs
    • Articles >
      • Scientific Papers Generated >
        • Scientific Papers PLD
        • Scientific Papers MSD
        • Scientific Papers MBE
      • Certifications ISO 9001
      • Events
    • UHV Technology >
      • E-Beam Research
      • CIGS Research
      • UHV Deposition Techniques >
        • Molecular Beam Epitaxy ( Laser MBE)
        • Pulsed Laser Deposition (PLD)
        • Magnetron Sputtering Deposition (MSD)
        • Electron Beam Evaporator (EBE)
        • Ion-Beam Sputter Deposition (IBSD)
        • Plasma Enhanced Atomic Layer Deposition (PEALD)
      • FBBear System Control Software
      • Useful Data
    • Profile
  • PVD
    • Industrial >
      • Large Sputter
      • Industrial E-Beam
    • MBE
    • PLD
    • SPUTTER
    • E-Beam evaporator
    • IBSD and IBE
    • Josephson Junction E-Beam(Qubit manufacture)
    • Customized UHV Systems
  • Laser Heater
  • UHV Cluster System
  • ALD and CVD
    • Etching >
      • RIE 80
      • Plasma-80ICP
      • Remote Plasma source
    • ALD (Atomic Layer Deposition)
  • UHV design & components
    • Substrate Manipulator
    • Chambers
    • Custom Weldments
    • Isolation Vacuum Gate Valves
    • Shielding Gate Valves
    • XYZ stage
    • Transfer Arms
  • Media
  • Contact