​Sputter-3 (Speed)

• Wafer size – 2 inch
• Single process chamber
• SuS 304 24” rectangular chamber
• Base pressure E(-8) torr
• 4 in substrate size (Optional 8 in)
• Radiative sample heater up to 250 C
• DC, RF or pulsed DC power supply
• FBBEAR entire system control software

Option

• 3 in sputter cathodes
• Pressure control system: upstream
• Multi gas inlet system
• High temperature substrate heating stage

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Sutter-16

• SuS 316L 24” electro polished chamber
• Base pressure 5E(-10)  torr
• Maximum wafer size 4 in
• 4-axes substrate manipulator (XYZ and rotation)
• Radiative substrate heater up to 850 C
• 4 × 2 in magnetron sputter cathodes
• Ar, N2, O2 inlet lines for three cathodes
• FBBEAR entire system control software

Option

• 3 in sputter cathodes
• Pressure control system: upstream
• Mask/Wedge system
• Remote plasma source
• KRI ion source including RFICP and KDC style

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Sputter-24

• SS 316L 24” electro polished chamber
• Base pressure 5E(-9)  torr
• Maximum wafer size: 4 inch
• 4-axes substrate manipulator (XYZ and rotation)
• Radiative substrate heater:  750 C
• 4 × 2 in magnetron sputter cathodes
• Ar, N2, O2 inlet lines for three cathodes
• FBBEAR entire system control software

Option

• Laser heating stage up 1000 C
• Pressure control system: upstream
• Mask/Wedge system
• Remote plasma source
• KRI ion source including RFICP and KDC style
• DC, RF or pulsed DC power supply

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