UHV Plasma Enhanced Atomic Layer Deposition (PEALD)

Introductory Principle

Plasma Enhanced Atomic Layer Deposition (PEALD) is a deposition technique used for producing high quality epitaxial (atomic layer) thin film. PEALD use chemical precursors in which each precursors are carefully selected and introduced in specific order. During the deposition process, the first deposited layer passivates the surface to inhibit further deposition. After that, the passivation will be removed and activate the surface to allow deposition of the second layer. This careful precursor introduction allow precise control of epitaxial deposition, thickness, composition and morphology.

AdNaNoTek's PEALD System can be modified to any type:

• Rapid Thermal Atomic Layer Deposition
• Low Pressure Atomic Layer Deposition
• Plasma Enhanced Atomic Layer Deposition (Inductively Coupled Plasma, ICP or  Electron Cyclotron Resonance, ECR)

This technique permits the growth of high quality thin films with atomic layer precision.

Plasma Enhanced Atomic Layer Deposition in action

Precursor, valves, and gas lines

Systems Overview

PEALD - 6

UHV Deposition Techniques