Sputter Models

S4C

High Vacuum, upto 3 sputter cathode. Suitable for most of applications.

Sputter 16

Ultra High Vacuum, upto 6 sputter cathode. Suitable for all of applications.

Sputter 24

Ultra High Vacuum, upto 7 sputter cathode. Suitable for all of applications.

Adnano-tek manufactures single or integrated sputtering systems for your specific deposition requirements. The equipment used RF and/or DC magnetron sources ,the size from 2 inch  to 8 inches in diameter. We can provide systems to handle wafers up to 300 mm in diameter, heating up to 800°C by resistance heater or 1000°C by Laser heater, and RF bias.

Magnetron Sputtering Deposition (S4C)

S4C is your best partner for start up lab.
Easy affordable price and flexible module design.
Real Solid and robust quality.

MAIN SPECIFICATIONS:

  • Single process chamber
  • SuS304 24" rectangular chamber
  • 5E-8 Torr Base Pressure
  • 4-in substrate size (Optional 8 inch)
  • Radiant heating element with sample heating temperature: 250°C
  • Up to 3 x 2-inch Magnetron Sputter cathodes
  • Ar MFC and plumbing
  • DC, RF, or pulsed-DC power supplies
Optional:
  • 3 inch Sputter Cathodes
  • Pressure control system: upstream
  • Multi gas inlet system
  • High temperature Heater
  • Formosa System Control Software

UHV Magnetron Sputtering Deposition (SPUTTER-16)

Picture
















​


​MAIN SPECIFICATIONS:

  • SuS316L 24" electro-polished chamber
  • 5E-10 Torr Base Pressure
  • up to 4-in substrate size (4inch max.)
  • 4-axes sample manipulator (XYZ, and Rotation)
  • Radiant heating element with sample heating temperature: 850°C
  • 4 x 2-inch Magnetron Sputter cathodes
  • 2 Gas set each correspond to 3 cathodes (Ar,O2,N2)
  • DC, RF, or pulsed-DC power supplies
  • Formosa System Control Software
Optional:
  • 3 inch Sputter Cathodes
  • Pressure control system: upstream
  • Mask/Wedge system
  • Remote Plasma source

Magnetron Sputtering System
Multi Target Sputter System
Applications:
-GMR,TMR,MTJ
-Spin Electronics
-Superconducting Niobium titanium nitride (NbTiN) ​

AdNaNoTek’s Magnetron Sputtering Deposition (Sputter) can deposit small- to large-size thin-film with extremely high quality and a great repeatability. DC, RF, or pulsed DC power supplies can be used depending on the kind of material you want to deposit. In addition, single, con focal, or parallel configuration can be designed to allow more flexibility and variations in the thin layer film that you want to deposit.

Precise control and high stability of thin-layer deposition is achieved by making the process automated with the use of the FBBEAR control software. In addition, FBBear control software, provides complete data logging, and precise parameter tuning  which allows user to have easy operation and reliable experimental repeatability.

Sputter deposition can be applied for thin layer deposition of materials like: Metals (Si, Cr, Mo, Al, Ag, Ti, Au, etc.), SiO2, magnetic metals (Fe, Co, Ni), metal oxides (ITO, IZO, AZO, etc.).Niobium titanium

Twin Sputter 24 system and Twin Sputter 24


This Sputter system is build for epitaxy sputter function, sputter cathode easy extended working distance from 5cm to 30cm (possible), we can custom design any working distance for you. The cathode include face to face cathode and standard cathode confocal facing substract.
Sample easy heated up to 1200 degree C (used our laser heater). Full automatic control and process.

Suptter 24 is Our most famous UHV sputter.
Since the highest cost to value ration, precise control, easy use software, up to 7 cathode available in each chamber.
Used in ultra thin film application, magnetic application and quantium field.

JEB-24ADV
JEB-2ADV is capable install five (5) sputter cathode in deposition chamber, It become a multi source equipment, both E-beam function and sputter deposition function available.
Sample can be rotation and Tilting for sputtering and evaporation for Quantum computing application.

Premium Sputter Cluster (SPUTTER-Cross with PLD)

Sputter Cross is a optimized sputter system, which contains 2 sputter chamber and 1 pld chamber.
2 sputter chambers can installed with different sputter target to prevent cross contamination, PLD system allow researchers to develop new material.
Center loadlock/transfer chamber allow sample transferred during multi process steps
Sample transferring can be manually or automatically depends on the configuration.
SPUTTER MAIN SPECIFICATIONS:

  • 2 X UHV Sputter Chamber
  • ​5E-10 Torr Base Pressure
  • 2-in substrate size (4inch max.)
  • 4-axes sample manipulator (XYZ, and Rotation)
  • Radiant heating element with sample heating temperature: 850°C
  • 11 x 2-inch Magnetron Sputter cathodes
  • 4 Gas set each correspond to 3 cathodes (Ar,O2,N2)
  • DC, RF, or pulsed-DC power supplies
  • Formosa System Control Software
Optional:
  • 3 inch Sputter Cathodes
  • Pressure control system: upstream
  • Mask/Wedge system
  • Remote Plasma source
PLD MAIN SPECIFICATIONS:
  • 12-in Spherical SS316L electro-polished Chamber
  • < 5E-10 Torr Base Pressure
  • UHV pumps and gauges
  • 10x10mm substrate size
  • 5-axes sample manipulator (XYZ, Rotation, and Tilt)
  • Laser Heating Element with sample heating temperature: 1200°C (in < E-3 torr) and 1000°C (in > E-3 torr) compatible to oxygen-rich and any atmospheric conditions
  • Planetary target manipulator with 6 * 1"(or 3*2") target holders
  • Laser viewport with "smart defender"
  • Sample and target in-vacuum transfer
  • FBBear System Control Software
Optional:
  • High pressure RHEED system (real-time epitaxy monitoring) 
  • Excimer laser with optical path
  • Mask system with z-motion
  • Pressure control system: upstream and downstream​
This System include one PLD and Sputter (Sputter and IBSD ion source), Sample transfer from one chamber to other one, it include 4 sputter cathodes, wafer up to 4 inch can be heated up to 500 degree C.

More Optional

  • E-11torr MBE-concept Sputter system
  • Parallel sputtering system
  • DC/RF substrate biasing
  • Ion beam assisted deposition
  • Ion beam clean/etching
  • High Pressure RHEED system (real-time epitaxy monitoring)
  • Mask system with z-motion
  • Pre-annealing heating system in Load Lock
  • Substrate storage mechanism in Load lock

Related Links:

Technologies: MSD
Brochures: MSD
Papers: MSD
TiN Result
Here is TiN sputtering, We used Ti target, Process gas are Argon and Nitrogen
This result made by Sputter 24 system

TEM Result
Ta(3)/Fe81Ga19（20）MgO(5)/PMN-PT Substract
This result made by Sputter 24 system

Results

GRAPHENE application: Deposition Copper on Sapphire wafer
​No Copper evaporation after annealing, high density
Cu Film on sapphire film, as you see before anneal process, the Cu grand is smaller than 50nm in SEM image, after anneal process in AFM result Cu111 is 100% ( blue color ) in EBSD analysis.

Copper thin film after annealing andno evaporation here is Cu111 structure

Here are EBSD analysis for Copper film, you can see all area is Cu111, Right side are AFM result.
​

UHV Sputter v.s. High vacuum Sputter
Left result are Comparation result shows in SIMS analysis, that  O2, C, Cl, N contamination compare to High vacuum sputter systems.
Left side is Adnano-tek Sputter SIMS result, Right side is Other high vacuum Sputter
You can see Adnano-tek Pd film and Pt film H+ and O-, N- ions peaks are much lower than Right side other Sputter system.
So, Result tell us Our Sputter can give customer better result and more clean thin film.

    Request more information